[1]杨磊,陆静,张大语.蓝宝石衬底铜抛-CMP加工技术[J].华侨大学学报(自然科学版),2020,41(6):701-706.[doi:10.11830/ISSN.1000-5013.202001002]
　YANG Lei,LU Jing,ZHANG Dayu.Copper Surface Polishing and CMP Processing Technology of Sapphire Substrate[J].Journal of Huaqiao University(Natural Science),2020,41(6):701-706.[doi:10.11830/ISSN.1000-5013.202001002]
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蓝宝石衬底铜抛-CMP加工技术()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第41卷
期数:
2020年第6期
页码:
701-706
栏目:
出版日期:
2020-11-20

文章信息/Info

Title:
Copper Surface Polishing and CMP Processing Technology of Sapphire Substrate
文章编号:
1000-5013(2020)06-0701-06
作者:
杨磊;  陆静;  张大语
华侨大学 制造工程研究院, 福建 厦门 361021
Author(s):
YANG Lei;  LU Jing;  ZHANG Dayu
Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
关键词:
蓝宝石衬底;  化学机械抛光;  表面质量;  工艺优化
Keywords:
sapphire substrate;  chemical mechanical polishing;  surface quality;  process optimization
分类号:
TH162
DOI:
10.11830/ISSN.1000-5013.202001002
文献标志码:
A
摘要:
针对蓝宝石衬底超精密加工存在的抛光表面不稳定问题,对蓝宝石衬底铜抛-化学机械抛光(CMP)加工技术进行研究,系统探讨铜抛与CMP的抛光压力、转速和抛光时间对蓝宝石衬底表面质量及加工效率的影响.综合评价各表面质量指标,结果表明:在满足表面质量对抛光工艺要求的前提下,采用铜抛的最佳工艺参数为铜抛压力98.0 kPa,转速55 r·min-1,铜抛时间30 min;化学机械抛光的最佳工艺参数为抛光压力215.6 kPa,转速60 r·min-1,抛光时间120 min,由此可获得高质量、无损伤的蓝宝石衬底抛光表面.
Abstract:
Aiming at the problem of instability about the polishing surface quality in ultra-precision machining of sapphire substrate, the research on copper surface polishing and chemical mechanical polishing(CMP)processing technology of sapphire substrate was carried out. The effects of copper polishing and CMP polishing pressure, rotation speed and polishing time on the surface quality and processing efficiency of sapphire substrates were systematically discussed. Comprehensive evaluation of various surface quality indicators indicated that, under the premise of meeting the requirements of surface quality for polishing process, the optimized processing parameters of copper surface polishing are as follows: the pressure is 98.0 kPa, the speed is 55 r·min-1 and the polishing time is 30 min; the optimized process conditions of CMP are as follows: the pressure is 215.6 kPa, the speed is 60 r·min-1 and the polishing time is 120 min. A high quality and non-destructive sapphire substrate polishing surface could be obtained.

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备注/Memo

备注/Memo:
收稿日期: 2020-01-01
通信作者: 陆静(1981-),女,教授,博士,博士生导师,主要从事半导体基片的超精密加工及超细磨料表面改性的研究.E-mail:16342740@qq.com.
基金项目: 国家自然科学基金资助项目(51475175); 福建省科技计划项目(2018I0012); 福建省厦门市科技计划项目(3502Z20173049); 华侨大学研究生科研创新能力培育计划资助项目(18014080030)
更新日期/Last Update: 2020-11-20